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APTM100DSK35T3G
Dual Buck chopper MOSFET Power Module
13 14 Q1 Q2 11 22 19 CR1 23 8 CR 2 7 10
VDSS = 1000V RDSon = 350m typ @ Tj = 25C ID = 22A @ Tc = 25C
Application * AC and DC motor control * Switched Mode Power Supplies Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Each leg can be easily paralleled to achieve a single buck of twice the current capability * RoHS Compliant
18
29 15
30
31 R1
32 16
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTM100DSK35T3G- Rev 1 July, 2006
Max ratings 1000 22 17 88 30 420 390 25 50 3000
Unit V A V m W A
APTM100DSK35T3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
VGS = 0V,VDS = 1000V VGS = 0V,VDS = 800V T j = 25C T j = 125C
Typ
VGS = 10V, ID = 11A VGS = VDS, ID = 2.5mA VGS = 30V, VDS = 0V
350 3
Max 100 500 420 5 100
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 22A Inductive switching @ 125C VGS = 15V VBus = 670V ID = 22A R G = 5 Inductive switching @ 25C VGS = 15V, VBus = 670V ID = 22A, R G = 5 Inductive switching @ 125C VGS = 15V, VBus = 670V ID = 22A, R G = 5
Min
Typ 5.2 0.88 0.16 186 24 122 18 12 155 40 900 623 1423 779
Max
Unit nF
nC
ns
J
J
Diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
Test Conditions VR=1000V IF = 30A IF = 60A IF = 30A IF = 30A VR = 667V di/dt=200A/s Tj = 25C Tj = 125C Tc = 70C
Min 1000
Typ
Max 250 500
Unit V A A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
30 1.9 2.2 1.7 290 390 670 2350
2.3 V
Qrr
Reverse Recovery Charge
nC
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APTM100DSK35T3G- Rev 1 July, 2006
trr
Reverse Recovery Time
ns
APTM100DSK35T3G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight transistor Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.32 1.2 150 125 100 4.7 110 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min
Typ 50 3952
Max
Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
SP3 Package outline (dimensions in mm)
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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APTM100DSK35T3G- Rev 1 July, 2006
17
28
APTM100DSK35T3G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.9 0.7 0.5 0.3
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 60
VGS=15, 10&8V
Transfert Characteristics 80 70 ID, Drain Current (A) 60 50 40 30 20 10 0 30 0 1 2 3 4 5
T J=25C T J=125C
VDS > ID(on)xRDS (on)MAX 250s pulse test @ < 0.5 duty cycle
I D, Drain Current (A)
50 40 30 20 10 0 0 5 10 15 20
7V
6.5V 6V
5.5V 5V
TJ=-55C
25
6
7
8
9
VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS=10V @ 11A
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 25 20 15 10 5 0
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
VGS=10V V GS=20V
10
20
30
40
50
60
25
50
75
100
125
150
APTM100DSK35T3G- Rev 1 July, 2006
ID, Drain Current (A)
TC, Case Temperature (C)
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APTM100DSK35T3G
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 14 12 10 8 6 4 2 0 0 50 100 150 200 250 Gate Charge (nC)
APTM100DSK35T3G- Rev 1 July, 2006
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS =10V ID=11A
100
limited by RDSon 100s
10 Single pulse TJ =150C TC=25C 1 1
1ms
10ms
10 100 1000 VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage I D=22A TJ=25C
VDS=200V VDS=500V V DS =800V
10000
Ciss
1000
Coss
Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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APTM100DSK35T3G
Delay Times vs Current 180 160 td(on) and td(off) (ns) 140 tr and tf (ns) 120 100 80 60 40 20 0 0 10 20 30 40 50 ID, Drain Current (A) Switching Energy vs Current
V DS=670V RG=5 T J=125C L=100H
Rise and Fall times vs Current 80 t d(off) 70 60 50 40 30 20 10 0 0 10 20 30 40 I D, Drain Current (A) 50 tr
VDS=670V RG=5 TJ=125C L=100H
tf
td(on)
Switching Energy vs Gate Resistance 4 Switching Energy (mJ) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 Eoff Eon
VDS=670V ID=22A TJ=125C L=100H
2.5
Switching Energy (mJ)
2 1.5 1 0.5 0 0
V DS=670V RG=5 T J=125C L=100H
Eon
Eoff
E off
10
20
30
40
50
ID, Drain Current (A) Operating Frequency vs Drain Current
ZVS
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage I DR, Reverse Drain Current (A) 1000
Frequency (kHz)
250 225 200 175 150 125 100 75 50 25 0 5
ZCS
100
T J=150C
VDS=670V D=50% RG=5 T J=125C T C=75C
10
T J=25C
Hard switching
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
APTM100DSK35T3G- Rev 1 July, 2006
8
10 13 15 18 ID, Drain Current (A)
20
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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